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Characterisation of InAs-based epilayers by FTIR spectroscopy

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dc.contributor.author Baisitse, TR
dc.contributor.author Forbes, A
dc.contributor.author Katumba, G
dc.contributor.author Botha, JR
dc.contributor.author Engelbrecht, JAA
dc.date.accessioned 2008-01-31T10:02:05Z
dc.date.available 2008-01-31T10:02:05Z
dc.date.issued 2008
dc.identifier.citation Baisitse, TR et al. 2008. Characterisation of InAs-based epilayers by FTIR spectroscopy. Physica Status Solidi C Conferences, Vol. 5(2), pp 573-576 en
dc.identifier.issn 1610-1634
dc.identifier.uri http://hdl.handle.net/10204/1998
dc.description Copyright: 2008 John Wiley & Sons Ltd en
dc.description.abstract In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements. en
dc.language.iso en en
dc.publisher John Wiley & Sons Ltd en
dc.subject MOVPE en
dc.subject Metal organic vapour phase epitaxial en
dc.subject InAs en
dc.subject GaAs en
dc.subject Infrared reflectance spectroscopy en
dc.title Characterisation of InAs-based epilayers by FTIR spectroscopy en
dc.type Article en
dc.identifier.apacitation Baisitse, T., Forbes, A., Katumba, G., Botha, J., & Engelbrecht, J. (2008). Characterisation of InAs-based epilayers by FTIR spectroscopy. http://hdl.handle.net/10204/1998 en_ZA
dc.identifier.chicagocitation Baisitse, TR, A Forbes, G Katumba, JR Botha, and JAA Engelbrecht "Characterisation of InAs-based epilayers by FTIR spectroscopy." (2008) http://hdl.handle.net/10204/1998 en_ZA
dc.identifier.vancouvercitation Baisitse T, Forbes A, Katumba G, Botha J, Engelbrecht J. Characterisation of InAs-based epilayers by FTIR spectroscopy. 2008; http://hdl.handle.net/10204/1998. en_ZA
dc.identifier.ris TY - Article AU - Baisitse, TR AU - Forbes, A AU - Katumba, G AU - Botha, JR AU - Engelbrecht, JAA AB - In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements. DA - 2008 DB - ResearchSpace DP - CSIR KW - MOVPE KW - Metal organic vapour phase epitaxial KW - InAs KW - GaAs KW - Infrared reflectance spectroscopy LK - https://researchspace.csir.co.za PY - 2008 SM - 1610-1634 T1 - Characterisation of InAs-based epilayers by FTIR spectroscopy TI - Characterisation of InAs-based epilayers by FTIR spectroscopy UR - http://hdl.handle.net/10204/1998 ER - en_ZA


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