In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements.
Reference:
Baisitse, TR et al. 2008. Characterisation of InAs-based epilayers by FTIR spectroscopy. Physica Status Solidi C Conferences, Vol. 5(2), pp 573-576
Baisitse, T., Forbes, A., Katumba, G., Botha, J., & Engelbrecht, J. (2008). Characterisation of InAs-based epilayers by FTIR spectroscopy. http://hdl.handle.net/10204/1998
Baisitse, TR, A Forbes, G Katumba, JR Botha, and JAA Engelbrecht "Characterisation of InAs-based epilayers by FTIR spectroscopy." (2008) http://hdl.handle.net/10204/1998
Baisitse T, Forbes A, Katumba G, Botha J, Engelbrecht J. Characterisation of InAs-based epilayers by FTIR spectroscopy. 2008; http://hdl.handle.net/10204/1998.
