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GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device

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dc.contributor.author Linganiso, EC
dc.contributor.author Rodrigues, R
dc.contributor.author Mhlanga, SD
dc.contributor.author Mwakikunga, Bonex W
dc.contributor.author Coville, NJ
dc.contributor.author Hümmelgen, IA
dc.date.accessioned 2015-08-19T11:14:42Z
dc.date.available 2015-08-19T11:14:42Z
dc.date.issued 2013-12
dc.identifier.citation Linganiso, E.C, Rodrigues, R, Mhlanga, S.D, Mwakikunga, B.W, Coville, N.J and Hümmelgen, I.A. 2013. GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device. Materials Chemistry and Physics, vol. 143(1), pp 367-372 en_US
dc.identifier.issn 0254-0584
dc.identifier.uri http://ac.els-cdn.com/S0254058413006792/1-s2.0-S0254058413006792-main.pdf?_tid=f2e80e84-3043-11e5-ac67-00000aacb361&acdnat=1437550590_e1332ccb1c863d51c58751ed3dc07472
dc.identifier.uri http://hdl.handle.net/10204/8100
dc.identifier.uri https://www.sciencedirect.com/science/article/pii/S0254058413006792
dc.identifier.uri https://doi.org/10.1016/j.matchemphys.2013.09.011
dc.description Copyright: 2013 Elsevier. Due to copyright restrictions, the attached PDF file only contains the abstract of the full text item. For access to the full text item, please consult the publisher's website. The definitive version of the work is published in Materials Chemistry and Physics, vol. 143(1), pp 367-372 en_US
dc.description.abstract The wide band-gap semiconductor material gallium nitride was synthesized using a one step microwave-assisted solution phase technique. The synthesized GaN nanocrystals showed an intense ultraviolet-blue emission typical of GaN materials. Hydrostatic pressure sensors were fabricated using a GaN/polyvinyl alcohol (PVA) composite film deposited onto an interdigitated electrode and studied by measuring the change in alternating current conductance of the devices at varied applied pressures. Three different GaN concentrations of 29, 50 and 67% were used. A very high sensitivity in the range 100e200 kPa was observed for these devices. The composite devices demonstrated both response and recovery times of less than 16 s. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.ispartofseries Workflow;11867
dc.subject Nanostructures en_US
dc.subject Semiconductors en_US
dc.subject Composite materials en_US
dc.subject Chemical synthesis en_US
dc.subject Electrical characterization en_US
dc.title GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device en_US
dc.type Article en_US
dc.identifier.apacitation Linganiso, E., Rodrigues, R., Mhlanga, S., Mwakikunga, B. W., Coville, N., & Hümmelgen, I. (2013). GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device. http://hdl.handle.net/10204/8100 en_ZA
dc.identifier.chicagocitation Linganiso, EC, R Rodrigues, SD Mhlanga, Bonex W Mwakikunga, NJ Coville, and IA Hümmelgen "GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device." (2013) http://hdl.handle.net/10204/8100 en_ZA
dc.identifier.vancouvercitation Linganiso E, Rodrigues R, Mhlanga S, Mwakikunga BW, Coville N, Hümmelgen I. GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device. 2013; http://hdl.handle.net/10204/8100. en_ZA
dc.identifier.ris TY - Article AU - Linganiso, EC AU - Rodrigues, R AU - Mhlanga, SD AU - Mwakikunga, Bonex W AU - Coville, NJ AU - Hümmelgen, IA AB - The wide band-gap semiconductor material gallium nitride was synthesized using a one step microwave-assisted solution phase technique. The synthesized GaN nanocrystals showed an intense ultraviolet-blue emission typical of GaN materials. Hydrostatic pressure sensors were fabricated using a GaN/polyvinyl alcohol (PVA) composite film deposited onto an interdigitated electrode and studied by measuring the change in alternating current conductance of the devices at varied applied pressures. Three different GaN concentrations of 29, 50 and 67% were used. A very high sensitivity in the range 100e200 kPa was observed for these devices. The composite devices demonstrated both response and recovery times of less than 16 s. DA - 2013-12 DB - ResearchSpace DP - CSIR KW - Nanostructures KW - Semiconductors KW - Composite materials KW - Chemical synthesis KW - Electrical characterization LK - https://researchspace.csir.co.za PY - 2013 SM - 0254-0584 T1 - GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device TI - GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device UR - http://hdl.handle.net/10204/8100 ER - en_ZA


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