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Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

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dc.contributor.author Thabethe, S
dc.contributor.author Arendse, CJ
dc.contributor.author Mwakikunga, Bonex W
dc.date.accessioned 2014-12-15T07:38:25Z
dc.date.available 2014-12-15T07:38:25Z
dc.date.issued 2014-12
dc.identifier.citation Thabethe, S, Arendse, C.J and Mwakikunga, B.W. 2014. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. Journal of Alloys and Compounds, vol.616, pp 221–226 en_US
dc.identifier.issn 0925-8388
dc.identifier.uri http://www.sciencedirect.com/science/article/pii/S092583881401706X
dc.identifier.uri http://hdl.handle.net/10204/7814
dc.description Copyright: 2014 Elsevier. Published in Journal of Alloys and Compounds, vol.616, pp 221–226. Abstract only. en_US
dc.description.abstract Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF etching of the SiO(sub2)/Si substrate. When such substrates are overlaid with a thin film of Au, the nanowires obtained are found to be pure SiO(sub2). The Au layer disappears as vapour of AuCl(sub3) as its melting point is at 298 degrees C. Proposed mechanisms of growth in all the various scenarios are identified to be governed by self-catalyzed vapour–solid (VS) mechanism. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.ispartofseries Workflow;13749
dc.subject Iron–silicon en_US
dc.subject Silicon oxide en_US
dc.subject Amorphous silicon en_US
dc.subject Nanowires en_US
dc.subject Vapour transport CVD en_US
dc.title Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires en_US
dc.type Article en_US
dc.identifier.apacitation Thabethe, S., Arendse, C., & Mwakikunga, B. W. (2014). Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. http://hdl.handle.net/10204/7814 en_ZA
dc.identifier.chicagocitation Thabethe, S, CJ Arendse, and Bonex W Mwakikunga "Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires." (2014) http://hdl.handle.net/10204/7814 en_ZA
dc.identifier.vancouvercitation Thabethe S, Arendse C, Mwakikunga BW. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. 2014; http://hdl.handle.net/10204/7814. en_ZA
dc.identifier.ris TY - Article AU - Thabethe, S AU - Arendse, CJ AU - Mwakikunga, Bonex W AB - Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF etching of the SiO(sub2)/Si substrate. When such substrates are overlaid with a thin film of Au, the nanowires obtained are found to be pure SiO(sub2). The Au layer disappears as vapour of AuCl(sub3) as its melting point is at 298 degrees C. Proposed mechanisms of growth in all the various scenarios are identified to be governed by self-catalyzed vapour–solid (VS) mechanism. DA - 2014-12 DB - ResearchSpace DP - CSIR KW - Iron–silicon KW - Silicon oxide KW - Amorphous silicon KW - Nanowires KW - Vapour transport CVD LK - https://researchspace.csir.co.za PY - 2014 SM - 0925-8388 T1 - Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires TI - Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires UR - http://hdl.handle.net/10204/7814 ER - en_ZA


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