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Electrodeposited Cu2ZnSnS4 thin films

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dc.contributor.author Valdes, M
dc.contributor.author Modibedi, Remegia M
dc.contributor.author Mathe, Mahlanyane K
dc.contributor.author Hillie, T
dc.contributor.author Vazquez, M
dc.date.accessioned 2014-07-30T09:17:56Z
dc.date.available 2014-07-30T09:17:56Z
dc.date.issued 2014-05
dc.identifier.citation Valdes, M, Modibedi, M, Mathe, M, Hillie, T and Vazquez, M. 2014. Electrodeposited Cu2ZnSnS4 thin films. Electrochimica Acta, vol. 128, pp 393-399 en_US
dc.identifier.issn 0013-4686
dc.identifier.uri http://ac.els-cdn.com/S0013468613021786/1-s2.0-S0013468613021786-main.pdf?_tid=97a2e922-13fc-11e4-8170-00000aab0f02&acdnat=1406293812_175203ef2a9d477971bfada90510f35b
dc.identifier.uri http://hdl.handle.net/10204/7536
dc.identifier.uri https://www.sciencedirect.com/science/article/pii/S0013468613021786
dc.identifier.uri https://doi.org/10.1016/j.electacta.2013.10.206
dc.description Copyright: 2014 Elsevier. This is an ABSTRACT ONLY. The definitive version is published in Electrochimica Acta, vol. 128, pp 393-399 en_US
dc.description.abstract Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic voltammetry (CV). Then, based on CVs results, CZTS films were grownemploying EC-ALD deposition cycles using the sequence Au/S/Cu/S/Zn/S/Sn/S to form the desired qua-ternary compound. In parallel, conventional one-step electrodeposition was carried out at -0.85 V vs.Ag/AgCl over 1 hour. A thermal treatment in sulfur vapor was also investigated in an attempt to optimizethe stoichiometry. The crystal structure of the films was characterized by XRD and micro Raman spectroscopy, while themorphology, thickness, topography and elemental composition were investigated using FIB-SEM and EDS. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.ispartofseries Workflow;13070
dc.subject Electrodeposition en_US
dc.subject Semiconductors en_US
dc.subject Thin films en_US
dc.subject Cu2ZnSnS4 en_US
dc.subject CZTS en_US
dc.title Electrodeposited Cu2ZnSnS4 thin films en_US
dc.type Article en_US
dc.identifier.apacitation Valdes, M., Modibedi, R. M., Mathe, M. K., Hillie, T., & Vazquez, M. (2014). Electrodeposited Cu2ZnSnS4 thin films. http://hdl.handle.net/10204/7536 en_ZA
dc.identifier.chicagocitation Valdes, M, Remegia M Modibedi, Mahlanyane K Mathe, T Hillie, and M Vazquez "Electrodeposited Cu2ZnSnS4 thin films." (2014) http://hdl.handle.net/10204/7536 en_ZA
dc.identifier.vancouvercitation Valdes M, Modibedi RM, Mathe MK, Hillie T, Vazquez M. Electrodeposited Cu2ZnSnS4 thin films. 2014; http://hdl.handle.net/10204/7536. en_ZA
dc.identifier.ris TY - Article AU - Valdes, M AU - Modibedi, Remegia M AU - Mathe, Mahlanyane K AU - Hillie, T AU - Vazquez, M AB - Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic voltammetry (CV). Then, based on CVs results, CZTS films were grownemploying EC-ALD deposition cycles using the sequence Au/S/Cu/S/Zn/S/Sn/S to form the desired qua-ternary compound. In parallel, conventional one-step electrodeposition was carried out at -0.85 V vs.Ag/AgCl over 1 hour. A thermal treatment in sulfur vapor was also investigated in an attempt to optimizethe stoichiometry. The crystal structure of the films was characterized by XRD and micro Raman spectroscopy, while themorphology, thickness, topography and elemental composition were investigated using FIB-SEM and EDS. DA - 2014-05 DB - ResearchSpace DP - CSIR KW - Electrodeposition KW - Semiconductors KW - Thin films KW - Cu2ZnSnS4 KW - CZTS LK - https://researchspace.csir.co.za PY - 2014 SM - 0013-4686 T1 - Electrodeposited Cu2ZnSnS4 thin films TI - Electrodeposited Cu2ZnSnS4 thin films UR - http://hdl.handle.net/10204/7536 ER - en_ZA


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