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Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode

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dc.contributor.author Pretorius, R en_US
dc.contributor.author Theron, CC en_US
dc.contributor.author Marais, TK en_US
dc.contributor.author Ras, HA en_US
dc.date.accessioned 2007-02-06T13:30:56Z en_US
dc.date.accessioned 2007-06-07T10:01:54Z
dc.date.available 2007-02-06T13:30:56Z en_US
dc.date.available 2007-06-07T10:01:54Z
dc.date.copyright en_US
dc.date.issued 1993-11 en_US
dc.identifier.citation Pretorius, R, et al. 1993. Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode. Materials Chemistry and Physics, vol. 36, 02 January, pp 31-38 en_US
dc.identifier.issn 0254-0584 en_US
dc.identifier.uri http://hdl.handle.net/10204/1553 en_US
dc.identifier.uri http://hdl.handle.net/10204/1553
dc.description.abstract The effective heat of formation model allows heats of formation to be calculated as a function of the concentration of the reactants at the growth interface. The effective concentration is taken to be the concentration of the liquidus minimum for the relevant binary system. Using this model, the anomalous and contradictory results for initial formation of titanium silicide phases are ascribed to the two eutectics at 14 and 84 at.% silicon (both at 1330 degrees C) for the Ti-Si binary system. The native oxide layer usually present on silicon surfaces and the affinity of Ti for oxygen further affect the effective concentration, thereby adding to the contradictory experimental results that have been found. In the Ni-Si system our measurements show that a sufficiently high concentration of oxygen in amorphous silicon can lead to formation of NiSi instead of Ni2Si, which is normally the first phase to form. This observation, as well as the formation of NiSi2 as the first phase in the presence of diffusion barriers, is also explained in terms of the effective heat of formation model. en_US
dc.format.extent 957990 bytes en_US
dc.format.mimetype application/pdf en_US
dc.language.iso en en_US
dc.publisher Elsevier Science SA Lausanne en_US
dc.rights Copyright: 1993 Elsevier Science SA Lausanne en_US
dc.source en_US
dc.subject Transition metal silicides en_US
dc.subject Nickel silicides en_US
dc.subject Thermodynamics en_US
dc.subject Titanium silicon interaction en_US
dc.title Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode en_US
dc.type Article en_US
dc.identifier.apacitation Pretorius, R., Theron, C., Marais, T., & Ras, H. (1993). Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode. http://hdl.handle.net/10204/1553 en_ZA
dc.identifier.chicagocitation Pretorius, R, CC Theron, TK Marais, and HA Ras "Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode." (1993) http://hdl.handle.net/10204/1553 en_ZA
dc.identifier.vancouvercitation Pretorius R, Theron C, Marais T, Ras H. Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode. 1993; http://hdl.handle.net/10204/1553. en_ZA
dc.identifier.ris TY - Article AU - Pretorius, R AU - Theron, CC AU - Marais, TK AU - Ras, HA AB - The effective heat of formation model allows heats of formation to be calculated as a function of the concentration of the reactants at the growth interface. The effective concentration is taken to be the concentration of the liquidus minimum for the relevant binary system. Using this model, the anomalous and contradictory results for initial formation of titanium silicide phases are ascribed to the two eutectics at 14 and 84 at.% silicon (both at 1330 degrees C) for the Ti-Si binary system. The native oxide layer usually present on silicon surfaces and the affinity of Ti for oxygen further affect the effective concentration, thereby adding to the contradictory experimental results that have been found. In the Ni-Si system our measurements show that a sufficiently high concentration of oxygen in amorphous silicon can lead to formation of NiSi instead of Ni2Si, which is normally the first phase to form. This observation, as well as the formation of NiSi2 as the first phase in the presence of diffusion barriers, is also explained in terms of the effective heat of formation model. DA - 1993-11 DB - ResearchSpace DP - CSIR KW - Transition metal silicides KW - Nickel silicides KW - Thermodynamics KW - Titanium silicon interaction LK - https://researchspace.csir.co.za PY - 1993 SM - 0254-0584 T1 - Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode TI - Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode UR - http://hdl.handle.net/10204/1553 ER - en_ZA


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