Hierarchical nanostructured Co-doped WO3 with carbon as template has been successfully synthesised through facile sol-gel method. The synthesised Co-doped WO3 was characterized by X-ray diffraction, Scanning electron microscopy, Transmission electron microscopy, Energy dispersive X-ray spectrometry, and Brunauer-Emmett-Teller and X-ray photoelectron spectroscopy. The gas sensing properties of WO3 doped with Co from 0 to 0.8 wt % were also investigated on various VOCs. The fabricated sensor based on 0.6 wt% Co-doped WO3 with carbon as a template showed good sensitivity, selectivity, fast response and recovery time towards 1.5 ppm of acetone at 50 °C under 90% relative humidity. The excellent gas sensing properties could be attributed to high surface area, small crystallite size, defect of WO3 and Co catalysis effect which promotes gas adsorption and most importantly the stabilized monoclinic phase of WO3, which accounts for the good selectivity.
Reference:
Saasa, V.R. et al. 2020. The hierarchical nanostructured Co-doped WO3/carbon and their improved acetone sensing performance. Materials Science in Semiconductor Processing, vol. 117, pp9
Saasa, V. R., Malwela, T., Lemmer, Y., Beukes, M., & Mwakikunga, B. W. (2020). The hierarchical nanostructured Co-doped WO3/carbon and their improved acetone sensing performance. http://hdl.handle.net/10204/11632
Saasa, Valentine R, Thomas Malwela, Yolandy Lemmer, M Beukes, and Bonex W Mwakikunga "The hierarchical nanostructured Co-doped WO3/carbon and their improved acetone sensing performance." (2020) http://hdl.handle.net/10204/11632
Saasa VR, Malwela T, Lemmer Y, Beukes M, Mwakikunga BW. The hierarchical nanostructured Co-doped WO3/carbon and their improved acetone sensing performance. 2020; http://hdl.handle.net/10204/11632.
Copyright: 2020 Elsevier. Due to copyright restrictions, the attached PDF file only contains the abstract of the full text item. For access to the full text item, please consult the publisher's website. The definitive version of the work is published in Materials Science in Semiconductor Processing, vol. 117, pp9