The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation of an atomic layer of an element, under controlled potential. HgSe thin films were formed on gold substrates using two reactant solutions: a solution of Hg2+ complexed with ethylenediaminetetraacetic acid and a HSeO3 ion solution. X-ray diffraction analysis showed a zinc blende structure for the deposits, with a strong (111) preferred texture, and an average grain size of 425 delta. Electron probe microscope analysis showed near-stoichiometric deposits. Fourier transform infrared spectroscopy reflection absorption measurements suggest two bandgaps: 0.42 and 0.88 eV.
Reference:
Mathe, MK et al. 2005. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. Journal of the Electrochemical society, Vol 152(11), pp C751-C755
Mathe, M. K., Cox, S., Venkatasamy, V., Happek, U., & Stickney, J. (2005). Formation of HgSe thin films using electrochemical atomic Layer epitaxy. http://hdl.handle.net/10204/1153
Mathe, Mahlanyane K, SM Cox, V Venkatasamy, U Happek, and JL Stickney "Formation of HgSe thin films using electrochemical atomic Layer epitaxy." (2005) http://hdl.handle.net/10204/1153
Mathe MK, Cox S, Venkatasamy V, Happek U, Stickney J. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. 2005; http://hdl.handle.net/10204/1153.
