ResearchSpace

Gate voltage controlled humidity sensing using MOSFET of VO2 particles

Show simple item record

dc.contributor.author Akande, Amos A
dc.contributor.author Dhonge, BP
dc.contributor.author Mwakikunga, Bonex W
dc.contributor.author Machatine, AGJ
dc.date.accessioned 2018-03-14T12:57:35Z
dc.date.available 2018-03-14T12:57:35Z
dc.date.issued 2017
dc.identifier.citation Akande, A.A. et al. 2017. Gate voltage controlled humidity sensing using MOSFET of VO2 particles. International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering, vol. 11(1): 78-81 en_US
dc.identifier.issn 1307-6892
dc.identifier.uri https://waset.org/publications/10006366/gate-voltage-controlled-humidity-sensing-using-mosfet-of-vo2-particles
dc.identifier.uri http://hdl.handle.net/10204/10099
dc.description Article published in International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering, vol. 11(1): 78-81 en_US
dc.description.abstract This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s). en_US
dc.language.iso en en_US
dc.publisher World Academy of Science, Engineering and Technology en_US
dc.relation.ispartofseries Worklist;20349
dc.subject VO2 en_US
dc.subject V2O5 en_US
dc.subject VO2 (B) en_US
dc.subject MOSFET en_US
dc.subject Gate voltage en_US
dc.subject Humidity sensor en_US
dc.title Gate voltage controlled humidity sensing using MOSFET of VO2 particles en_US
dc.type Article en_US
dc.identifier.apacitation Akande, A. A., Dhonge, B., Mwakikunga, B. W., & Machatine, A. (2017). Gate voltage controlled humidity sensing using MOSFET of VO2 particles. http://hdl.handle.net/10204/10099 en_ZA
dc.identifier.chicagocitation Akande, Amos A, BP Dhonge, Bonex W Mwakikunga, and AGJ Machatine "Gate voltage controlled humidity sensing using MOSFET of VO2 particles." (2017) http://hdl.handle.net/10204/10099 en_ZA
dc.identifier.vancouvercitation Akande AA, Dhonge B, Mwakikunga BW, Machatine A. Gate voltage controlled humidity sensing using MOSFET of VO2 particles. 2017; http://hdl.handle.net/10204/10099. en_ZA
dc.identifier.ris TY - Article AU - Akande, Amos A AU - Dhonge, BP AU - Mwakikunga, Bonex W AU - Machatine, AGJ AB - This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s). DA - 2017 DB - ResearchSpace DP - CSIR KW - VO2 KW - V2O5 KW - VO2 (B) KW - MOSFET KW - Gate voltage KW - Humidity sensor LK - https://researchspace.csir.co.za PY - 2017 SM - 1307-6892 T1 - Gate voltage controlled humidity sensing using MOSFET of VO2 particles TI - Gate voltage controlled humidity sensing using MOSFET of VO2 particles UR - http://hdl.handle.net/10204/10099 ER - en_ZA


Files in this item

This item appears in the following Collection(s)

Show simple item record